Major impacts of point defects and impurities on the carrier recombination dynamics in AlN

被引：32

作者：

Chichibu, S. F. ^{[1
]}

Onuma, T. ^{[1
]}

Hazu, K. ^{[1
]}

Uedono, A. ^{[2
]}

机构：

[1] Tohoku Univ, Ctr Adv Nitride Technol, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Univ Tsukuba, Inst Appl Phys, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 20期

关键词：

D O I：

10.1063/1.3517484

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Impacts of point defects and impurities on the carrier recombination dynamics in AlN are revealed by time-resolved spectroscopy and positron annihilation measurements. Intrinsically short low-temperature excitonic radiative lifetime (tau(R) similar to 10 ps) was elongated with the increase in Al-vacancy concentration up to 530 ps, irrespective of threading dislocation density. A continuous decrease in tau(R) with temperature rise up to 200 K for heavily doped samples revealed the carrier release from the band-tail formed due to impurities and point defects. Because room-temperature nonradiative lifetime was equally short for all samples, high temperature growth with appropriate defect management is necessary in extracting radiative nature of AlN. (C) 2010 American Institute of Physics. [doi:10.1063/1.3517484]

引用

页数：3

共 21 条

[1] Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects [J].

Chichibu, S. F. ;

Onuma, T. ;

Kubota, M. ;

Uedono, A. ;

Sota, T. ;

Tsukazaki, A. ;

Ohtomo, A. ;

Kawasaki, M. .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (09)

[2] Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques [J].

Chichibu, SF ;

Uedono, A ;

Onuma, T ;

Sota, T ;

Haskell, BA ;

DenBaars, SP ;

Speck, JS ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2005, 86 (02) :021914-1

[3] Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors [J].

Chichibu, Shigefusa F. ;

Uedono, Akira ;

Onuma, Takeyoshi ;

Haskell, Benjamin A. ;

Chakraborty, Arpan ;

Koyama, Takahiro ;

Fini, Paul T. ;

Keller, Stacia ;

Denbaars, Steven P. ;

Speck, James S. ;

Mishra, Umesh K. ;

Nakamura, Shuji ;

Yamaguchi, Shigeo ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Han, Jung ;

Sota, Takayuki .

NATURE MATERIALS, 2006, 5 (10) :810-816

[4]

Coleman P., 2000, Positron beams and their applications

[5] MOVPE growth of high-quality AlN [J].

Dadgar, A. ;

Krost, A. ;

Christen, J. ;

Bastek, B. ;

Bertram, F. ;

Krtschil, A. ;

Hempel, T. ;

Blaesing, J. ;

Haboeck, U. ;

Hoffmann, A. .

JOURNAL OF CRYSTAL GROWTH, 2006, 297 (02) :306-310

[6] LINEWIDTH DEPENDENCE OF RADIATIVE EXCITON LIFETIMES IN QUANTUM-WELLS [J].

FELDMANN, J ;

PETER, G ;

GOBEL, EO ;

DAWSON, P ;

MOORE, K ;

FOXON, C ;

ELLIOTT, RJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (20) :2337-2340

[7] High-quality nonpolar m-plane GaN substrates grown by HVPE [J].

Fujito, Kenji ;

Kiyomi, Kazumasa ;

Mochizuki, Tae ;

Oota, Hirotaka ;

Namita, Hideo ;

Nagao, Satoru ;

Fujimura, Isao .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (05) :1056-1059

[8] Hydrostatic deformation potentials and the question of exciton binding energies and splittings in aluminium nitride [J].

Gil, Bernard .

PHYSICAL REVIEW B, 2010, 81 (20)

[9] Impact of strain on free-exciton resonance energies in wurtzite AlN (vol 102, art no 123707, 2007) [J].

Ikeda, Hirokatsu ;

Okamura, Takahiro ;

Matsukawa, Kodai ;

Sota, Takayuki ;

Sugawara, Mariko ;

Hoshi, Takuya ;

Cantu, Pablo ;

Sharma, Rajat ;

Kaeding, John F. ;

Keller, Stacia ;

Mishra, Umesh K. ;

Kosaka, Kei ;

Asai, Keiichiro ;

Sumiya, Shigeaki ;

Shibata, Tomohiko ;

Tanaka, Mitsuhiro ;

Speck, James S. ;

DenBaars, Steven P. ;

Nakamura, Shuji ;

Koyama, Takahiro ;

Onuma, Takeyoshi ;

Chichibu, Shigefusa F. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (08)

[10] Impact of strain on free-exciton resonance energies in wurtzite AlN [J].

Ikeda, Hirokatsu ;

Okamura, Takahiro ;

Matsukawa, Kodai ;

Sota, Takayuki ;

Sugawara, Mariko ;

Hoshi, Takuya ;

Cantu, Pablo ;

Sharma, Rajat ;

Kaeding, John F. ;

Keller, Stacia ;

Mishra, Umesh K. ;

Kosaka, Kei ;

Asai, Keiichiro ;

Sumiya, Shigeaki ;

Shibata, Tomohiko ;

Tanaka, Mitsuhiro ;

Speck, James S. ;

DenBaars, Steven P. ;

Nakamura, Shuji ;

Koyama, Takahiro ;

Onuma, Takeyoshi ;

Chichibu, Shigefusa F. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (12)

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