Growth and characterization of GaSb/AlGaSb multi-quantum well structures on Si(001) substrates

被引：12

作者：

Toyota, Hideyuki ^{[1
]}

Sasaki, Tomonori ^{[1
]}

Jinbo, Yoshio ^{[1
]}

Uchitomi, Naotaka ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Dept Elect Engn, Niigata 9402188, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 01期

关键词：

molecular beam epitaxy; antimonide; semiconducting III-V material;

D O I：

10.1016/j.jcrysgro.2007.10.008

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaSb/AlGaSb multi-quantum well (MQW) structures with an AlSb initiation layer and a relatively thick GaSb buffer layer grown on Si (0 0 1) substrates were prepared by molecular beam epitaxy (MBE). Transmission electron microscopy (TEM) images and highresolution X-ray diffraction (XRD) patterns indicated definite MQW structures. The photoluminescence (PL) emission around 1.55 mu m wavelength was observed for 10.34nm GaSb/30nm Al0.6Ga0.4Sb MQW structure at room temperature. Dependence of PL emission energy on GaSb well width was well explained by finite square well potential model. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：78 / 82

页数：5

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