First-principles investigations of defect and phase stabilities in thermoelectric (GeTe)x(AgSbTe2)1-x

被引:7
作者
Shinya, Hikari [1 ]
Masago, Akira [1 ]
Fukushima, Tetsuya [1 ]
Funashima, Hiroki [1 ]
Katayama-Yoshida, Hiroshi [1 ]
机构
[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
基金
日本学术振兴会; 日本科学技术振兴机构;
关键词
TOTAL-ENERGY CALCULATIONS; AUGMENTED-WAVE METHOD; THERMAL-EXPANSION; BASIS-SET; REDETERMINATION; APPROXIMATION; PRESSURE; METALS; GETE;
D O I
10.7567/JJAP.53.111201
中图分类号
O59 [应用物理学];
学科分类号
摘要
We focus on the defect and phase stabilities in the pseudo binary alloy (GeTe)(x)(AgSbTe2)(1-x) (TAGS; tellurium antimony germanium silver). TAGS is expected to be a high effective thermoelectric material because its thermal conductivity shows anomalous behavior around the concentration of x = 0.8. The origin of the anomalous thermal conductivity and the stable structure in TAGS have not been well understood. To clarify the stable structure, we calculate the formation energies of the point and complex defects. It is found that the chain structure of Ag-Te-Sb has a lower formation energy in GeTe, and the system becomes more stable by assembling the Ag-Te-Sb chain structures. Moreover, the calculated mixing energy also shows that the TAGS system tends to undergo phase separation. In such structures, the grain boundary plays an important role in inducing large phonon scattering, leading to the thermal conductivity reduction. (C) 2014 The Japan Society of Applied Physics
引用
收藏
页数:4
相关论文
共 50 条
[21]   (GeTe)1-x(AgSnSe2)x: Strong Atomic Disorder-Induced High Thermoelectric Performance near the Ioffe-Regel Limit [J].
Liang, Gege ;
Lyu, Tu ;
Hu, Lipeng ;
Qu, Wanbo ;
Zhi, Shizhen ;
Li, Jibiao ;
Zhang, Yang ;
He, Jian ;
Li, Junqin ;
Liu, Fusheng ;
Zhang, Chaohua ;
Ao, Weiqin ;
Xie, Heping ;
Wu, Haijun .
ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (39) :47081-47089
[22]   Effect of Alloying Element X on Transformation Strains and Phase Stabilities between α" and β Ti-Nb-X (X = Al, Sn, Zr, Ta) Ternary Alloys from First-Principles Calculations [J].
Minami, Daichi ;
Uesugi, Tokuteru ;
Takigawa, Yorinobu ;
Higashi, Kenji .
MATERIALS TRANSACTIONS, 2016, 57 (03) :263-268
[23]   Enhancement of thermoelectric performance by stacking fault control in (GeTe)1-x(Bi2Te3)x compounds, synthesized by hot press sintering method [J].
Kumar, Anil ;
Rawat, Pooja ;
Kim, Jin Hee ;
Thoravat, Saurabh ;
Park, Junyoung ;
Jin, Hyungyu ;
Rhyee, Jong-Soo .
MATERIALS CHEMISTRY AND PHYSICS, 2024, 322
[24]   Low Thermal Conductivity and High Thermoelectric Performance in (GeTe)1-2x(GeSe)x(GeS)x: Competition between Solid Solution and Phase Separation [J].
Samanta, Manisha ;
Biswas, Kanishka .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2017, 139 (27) :9382-9391
[25]   First-Principles Study of Hydrogen Evolution Activity for Two-Dimensional M2XO2-2x(OH)2x (M = Ti, V; X = C, N) [J].
Zhang Shao-Zheng ;
Liu Jia ;
Xie Yan ;
Lu Yin-Ji ;
Li Lin ;
Lu Liang ;
Yang Jian-Hui ;
Wei Shi-Hao .
ACTA PHYSICO-CHIMICA SINICA, 2017, 33 (10) :2022-2028
[26]   Nonstoichiometric TiO2-x obtained via spark plasma sintering: thermoelectric properties and first-principles calculations [J].
Wang, Lijun ;
Li, Zhengxu ;
Jiang, Yinan ;
Itoi, Takaomi ;
Yoshida, Hiroyuki ;
Lu, Yun .
JOURNAL OF MATERIALS SCIENCE, 2022, 57 (32) :15213-15223
[27]   Investigation of electronic, optical, and thermoelectric properties of half-metallic spinel X2NO4 (X=B, Al): First-principles calculations [J].
Al-Reyahi, Anas Y. ;
Al Azar, Said ;
Mousa, Ahmad A. ;
Essaoud, Saber Saad ;
Maghrabi, Mufeed ;
Berarma, Khadidja ;
Aqili, Akram ;
Mufleh, Ahmad ;
Abu Radwan, Heba I. .
COMPUTATIONAL CONDENSED MATTER, 2023, 34
[28]   First-principles study of phase transitions in antiferromagnetic XF2 (X = Fe, Co and Ni) [J].
Wang, Hongbo ;
Liu, Xin ;
Li, Yinwei ;
Liu, Yanhui ;
Ma, Yanming .
SOLID STATE COMMUNICATIONS, 2011, 151 (20) :1475-1478
[29]   High stability Janus structures of two dimensional Fe3GeTe2 monolayer by first-principles investigations [J].
Hiep, Nguyen T. ;
Khan, Dinh T. ;
Thao, Le T. P. ;
Nguyen, Cuong Q. ;
Hoi, Bui D. ;
Phuc, Huynh V. ;
Hieu, Nguyen N. .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 186
[30]   Electronic and thermoelectric properties of Janus AsSeX (X = Cl, Br, I) monolayers: A first-principles study [J].
Luo, Xin ;
Pan, Lu ;
Zhang, Tian ;
Hu, Cui-E ;
Cheng, Yan ;
Geng, Hua-Yun .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 166