Primary recrystallization in a grain oriented silicon steel: On the origin of Goss{110}[001] grains

1) The αlγ fibres and their respective components did not change significantly between 70 and 90% deformation, while the volume fraction of Goss dropped slightly but significantly at the higher reduction. After recrystallization, γ increased but α slightly decreased 2) Two types of Goss orientations were observed as part of grain interior strain localizations in deformed but recovered samples - inclined respectively at 20 ± 4° and 37 ± 5° with the RD. The respective Goss bands formed clusters of recrystallized grains, also bearing the signature of the inclination (with RD) of the parent Goss bands. Relatively more Goss (within 20° of exact Goss) grains appeared from 37° bands (which were also wider along RD in the deformed microstructure) than from 20° bands. However, the 20° bands contained a much higher fraction of precise Goss grains (i.e. within 5° of exact Goss orientation). The predominance of 20° bands in 90% deformed and subsequently recrystallized material was reflected in relatively fewer but generally more perfect primary recrystallized Goss grains (i.e. with lower deviations from the exact Goss orientation). 3) Grains next to coarse second phase particles, possibly forming by PSN, were observed at the very early stages of recrystallization. This was closely followed by recrystallization of 20° and 37° Goss clusters, although no preference in recrystallization between Goss grains of the two clusters was observed.