Structural defects in SiO2/SiC interface probed by a slow positron beam

被引:12
作者
Maekawa, M
Kawasuso, A
Chen, ZQ
Yoshikawa, M
Suzuki, R
Ohdaira, T
机构
[1] Japan Atom Energy Res Inst, Adv Sci Res Ctr, Gunma 3701292, Japan
[2] Japan Atom Energy Res Inst, Takasaki Estab, Takasaki, Gumma, Japan
[3] Natl Inst Adv Sci & Technol, Photon Res Inst, Takasaki, Gumma, Japan
关键词
SiO2/SiC interface; interface defects; positron annihilation spectroscopy; dry oxidation; pyrogenic oxidation;
D O I
10.1016/j.apsusc.2004.10.085
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We studied structure of SiO2-/SiC interfaces grown by thermal oxidization using low energy positron beams. From the positron lifetime measurements, typical two lifetime components related to amorphous network and large open spaces are observed in SiO2, while only bulk lifetime in SiC. The lifetime of positrons near the interface is similar to that of SiO2 amorphous network and no lifetime components related to large open spaces are detected. From the Doppler broadening measurements, the momentum distribution, probably related to oxygen valence electrons, is enhanced near the interface. The above results imply that the interface region has less open spaces than SiO2 involving many oxygen dangling bonds. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:322 / 325
页数:4
相关论文
共 17 条
[1]   Oxidation of silicon carbide: Problems and solutions [J].
Afanas'ev, VV ;
Bassler, M ;
Pensl, G ;
Stesmans, A .
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :961-966
[2]   CHARACTERIZATION OF DEFECTS IN SI AND SIO2-SI USING POSITRONS [J].
ASOKAKUMAR, P ;
LYNN, KG ;
WELCH, DO .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) :4935-4982
[3]   A large reduction in interface-state density for MOS capacitor on 4H-SiC (11(2)over-bar0) face using H2 and H2O vapor atmosphere post-oxidation annealing [J].
Fukuda, K ;
Senzaki, J ;
Kushibe, M ;
Kojima, K ;
Kosugi, R ;
Suzuki, S ;
Harada, S ;
Suzuki, T ;
Tanaka, T ;
Arai, K .
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :1057-1060
[4]  
Harris G.L., 1995, Properties of Silicon Carbide
[5]   Characterization of oxide films on SiC by spectroscopic ellipsometry [J].
Iida, T ;
Tomioka, Y ;
Hijikata, Y ;
Yaguchi, H ;
Yoshikawa, M ;
Ishida, Y ;
Okumura, H ;
Yoshida, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (10B) :L1054-L1056
[6]   High sensitivity of positron annihilation to thermal oxidation of polyethylene [J].
Ito, K ;
Kobayashi, Y ;
Nanasawa, A .
APPLIED PHYSICS LETTERS, 2003, 82 (04) :654-656
[7]  
KRAUSEREHBERG R, 1998, SPRINGER SERIES SOLI, V27
[8]   STUDY OF SIO2-SI AND METAL-OXIDE-SEMICONDUCTOR STRUCTURES USING POSITRONS [J].
LEUNG, TC ;
ASOKAKUMAR, P ;
NIELSEN, B ;
LYNN, KG .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (01) :168-184
[9]   POSITRON-ANNIHILATION MOMENTUM PROFILES IN ALUMINUM - CORE CONTRIBUTION AND INDEPENDENT-PARTICLE MODEL [J].
LYNN, KG ;
MACDONALD, JR ;
BOIE, RA ;
FELDMAN, LC ;
GABBE, JD ;
ROBBINS, MF ;
BONDERUP, E ;
GOLOVCHENKO, J .
PHYSICAL REVIEW LETTERS, 1977, 38 (05) :241-244
[10]   SiO2/SiC interface proved by positron annihilation [J].
Maekawa, A ;
Kawasuso, A ;
Yoshikawa, A ;
Itoh, H .
APPLIED SURFACE SCIENCE, 2003, 216 (1-4) :365-370