Comparative Study of Cu Diffusion in Ru and Ru-C Films for Cu Metallization

被引：13

作者：

Chen, Chun-Wei ^{[1
]}

Jeng, Jiann-Shing ^{[2
]}

Chen, Jen-Sue ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan

[2] Far E Univ, Dept Mat Sci & Engn, Tainan 744, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 11期

关键词：

RUTHENIUM THIN-FILM; BARRIER PROPERTIES; SEED LAYER; COPPER; ELECTRODEPOSITION; SI; IMPROVEMENT; DEPOSITION; PROPERTY; FAILURE;

D O I：

10.1149/1.3479383

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this paper, the diffusivities of copper in 15 nm thick Ru and Ru-C barrier layers are determined experimentally by using sheet resistance and X-ray diffraction measurements with the Cu/barrier/Si samples. By fitting the dependence of diffusivities on temperature, the activation energy for Cu diffusion in Ru-C film is 1.11 eV, which is substantially higher than that in Ru film (0.54 eV). Microstructural analysis by transmission electron microscopy combined with energy-dispersive X-ray suggests that the higher activation energy for Cu diffusion in Ru-C is associated with the stuffing of added carbon atoms on the grain boundaries of the Ru matrix and consequently leading to the superior diffusion barrier performance of the Ru-C film. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3479383] All rights reserved.

引用

页码：H997 / H1002

页数：6

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