Role of Se vacancies on Shubnikov-de Haas oscillations in Bi2Se3: A combined magneto-resistance and positron annihilation study

被引：27

作者：

Devidas, T. R. ^{[1
]}

Amaladass, E. P. ^{[1
]}

Sharma, Shilpam ^{[1
]}

Rajaraman, R. ^{[1
]}

Sornadurai, D. ^{[1
]}

Subramanian, N. ^{[1
]}

Mani, Awadhesh ^{[1
]}

Sundar, C. S. ^{[1
]}

Bharathi, A. ^{[1
]}

机构：

[1] Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

来源：

EPL | 2014年 / 108卷 / 06期

关键词：

TOPOLOGICAL INSULATORS; SPECTROSCOPY; DEFECTS; SOLIDS; STATES;

D O I：

10.1209/0295-5075/108/67008

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Magneto-resistance measurements coupled with positron lifetime measurements, to characterize the vacancy-type defects, have been carried out on the topological insulator (TI) system Bi2Se3 of varying Se/Bi ratio. Pronounced Shubnikov-de Haas (SdH) oscillations are seen in nominal Bi2Se3.1 crystals for measurements performed in magnetic fields up to 15T in the 4K-10K temperature range, with field applied perpendicularly to the (001) plane of the crystal. The quantum oscillations, characteristic of 2D electronic structure, are seen only in the crystals that have a lower concentration of Se vacancies, as inferred from positron annihilation spectroscopy. Copyright (C) EPLA, 2014

引用

页数：6

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