Role of Se vacancies on Shubnikov-de Haas oscillations in Bi2Se3: A combined magneto-resistance and positron annihilation study

被引：27

作者：

Devidas, T. R. ^{[1
]}

Amaladass, E. P. ^{[1
]}

Sharma, Shilpam ^{[1
]}

Rajaraman, R. ^{[1
]}

Sornadurai, D. ^{[1
]}

Subramanian, N. ^{[1
]}

Mani, Awadhesh ^{[1
]}

Sundar, C. S. ^{[1
]}

Bharathi, A. ^{[1
]}

机构：

[1] Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

来源：

EPL | 2014年 / 108卷 / 06期

关键词：

TOPOLOGICAL INSULATORS; SPECTROSCOPY; DEFECTS; SOLIDS; STATES;

D O I：

10.1209/0295-5075/108/67008

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Magneto-resistance measurements coupled with positron lifetime measurements, to characterize the vacancy-type defects, have been carried out on the topological insulator (TI) system Bi2Se3 of varying Se/Bi ratio. Pronounced Shubnikov-de Haas (SdH) oscillations are seen in nominal Bi2Se3.1 crystals for measurements performed in magnetic fields up to 15T in the 4K-10K temperature range, with field applied perpendicularly to the (001) plane of the crystal. The quantum oscillations, characteristic of 2D electronic structure, are seen only in the crystals that have a lower concentration of Se vacancies, as inferred from positron annihilation spectroscopy. Copyright (C) EPLA, 2014

引用

页数：6

共 26 条

[1] Bulk Fermi surface coexistence with Dirac surface state in Bi2Se3: A comparison of photoemission and Shubnikov-de Haas measurements [J].

Analytis, James G. ;

Chu, Jiun-Haw ;

Chen, Yulin ;

Corredor, Felipe ;

McDonald, Ross D. ;

Shen, Z. X. ;

Fisher, Ian R. .

PHYSICAL REVIEW B, 2010, 81 (20)

[2] Topological Insulator Materials [J].

Ando, Yoichi .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2013, 82 (10)

[3] GRADIENT CORRECTION FOR POSITRON STATES IN SOLIDS [J].

BARBIELLINI, B ;

PUSKA, MJ ;

TORSTI, T ;

NIEMINEN, RM .

PHYSICAL REVIEW B, 1995, 51 (11) :7341-7344

[4] Crystal structure and chemistry of topological insulators [J].

Cava, R. J. ;

Ji, Huiwen ;

Fuccillo, M. K. ;

Gibson, Q. D. ;

Hor, Y. S. .

JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (19) :3176-3189

[5] Landau Quantization of Topological Surface States in Bi2Se3 [J].

Cheng, Peng ;

Song, Canli ;

Zhang, Tong ;

Zhang, Yanyi ;

Wang, Yilin ;

Jia, Jin-Feng ;

Wang, Jing ;

Wang, Yayu ;

Zhu, Bang-Fen ;

Chen, Xi ;

Ma, Xucun ;

He, Ke ;

Wang, Lili ;

Dai, Xi ;

Fang, Zhong ;

Xie, Xincheng ;

Qi, Xiao-Liang ;

Liu, Chao-Xing ;

Zhang, Shou-Cheng ;

Xue, Qi-Kun .

PHYSICAL REVIEW LETTERS, 2010, 105 (07)

[6]

Cullity B. D., 1956, ELEMENTS XRAY DIFFRA, P246

[7] Angular-dependent oscillations of the magnetoresistance in Bi2Se3 due to the three-dimensional bulk Fermi surface [J].

Eto, Kazuma ;

Ren, Zhi ;

Taskin, A. A. ;

Segawa, Kouji ;

Ando, Yoichi .

PHYSICAL REVIEW B, 2010, 81 (19)

[8]

Haim Beindenkopf, 2013, CONT CONCEPTS CONDEN, V6, P175

[9] Colloquium: Topological insulators [J].

Hasan, M. Z. ;

Kane, C. L. .

REVIEWS OF MODERN PHYSICS, 2010, 82 (04) :3045-3067

[10] p-type Bi2Se3 for topological insulator and low-temperature thermoelectric applications [J].

Hor, Y. S. ;

Richardella, A. ;

Roushan, P. ;

Xia, Y. ;

Checkelsky, J. G. ;

Yazdani, A. ;

Hasan, M. Z. ;

Ong, N. P. ;

Cava, R. J. .

PHYSICAL REVIEW B, 2009, 79 (19)

← 1 2 3 →