Performance Study of 12-CNTFET and GDI CNTFET based Full Adder in HSPICE

被引：0

作者：

Ahmad, Habib Muhammad Nazir ^{[1
]}

Islam, Mohammad Shafquatul ^{[1
]}

Jameel, Kazi Muhammad ^{[1
]}

Ochi, Arman Riaz ^{[1
]}

Hafiz, Rakibul ^{[1
]}

机构：

[1] Amer Int Univ Bangladesh, Dept Elect & Elect Engn, Dhaka, Bangladesh

来源：

2014 INTERNATIONAL CONFERENCE ON ADVANCES IN ENGINEERING AND TECHNOLOGY RESEARCH (ICAETR) | 2014年

关键词：

Carbon Nanotube Field Effect Transistor; Gate Diffusion Input; GDI based Full Adder design; 12-CNTFET; Power Delay Product; CMOS; low power; multiplexer; CARBON-NANOTUBE; DESIGN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This manuscript reports and analyzes 12-CNTFET and GDI CNTFET based full adder implementation at 32 nm level. As figures of merit, stability, power dissipation and Power Delay Product (PDP) are considered for the best overall performance. Intensive HSPICE simulations have been performed to investigate the distribution of the power and delay of the CNTFET-based full adders. Both circuit has noticeable reduction in short current power consumption but in terms of comparison GDI CNTFET shows better performance in both power consumption and Power Delay Product (PDP) variations. The CNTFET-based One bit Full Adder cell demonstrates that it tolerates the PVT (Process, Voltage, and Temperature) variations significantly better than its CMOS counterpart.

引用

页数：5

共 16 条

[1] Electron transport and velocity oscillations in a carbon nanotube [J].