Monte Carlo simulation of GaN/InN mixtures

被引:14
作者
Purton, JA [1 ]
Lavrentiev, MY
Allan, NL
机构
[1] CCLRC, Daresbury Lab, Warrington WA4 4AD, Cheshire, England
[2] Univ Bristol, Sch Chem, Bristol BS8 1TS, Avon, England
关键词
D O I
10.1039/b409770j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Exchange Monte Carlo calculations in the semi-grand canonical ensemble are used to determine the mixing properties of GaN and InN in both the wurtzite and zinc blende structures. Interatomic potentials are obtained via empirical fitting to the experimental, bulk properties of the end member materials. The difference in structure is reflected in the variation of the enthalpy of mixing with composition and phase diagrams for the hexagonal and cubic phases. The calculated consolute temperature is approximate to1725 K, in line with previous calculations. The calculated phase diagrams for the two structures are markedly asymmetric with the maximum in the binodals lying markedly on the Ga rich side. Our results are compared with available experimental data.
引用
收藏
页码:785 / 790
页数:6
相关论文
共 31 条
[1]   Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering [J].
Behr, D ;
Wagner, J ;
Ramakrishnan, A ;
Obloh, H ;
Bachem, KH .
APPLIED PHYSICS LETTERS, 1998, 73 (02) :241-243
[2]   Luminescences from localized states in InGaN epilayers [J].
Chichibu, S ;
Azuhata, T ;
Sota, T ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 1997, 70 (21) :2822-2824
[3]   Classical simulations of the properties of group-III nitrides [J].
Chisholm, JA ;
Lewis, DW ;
Bristowe, PD .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (22) :L235-L239
[4]   Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy [J].
Doppalapudi, D ;
Basu, SN ;
Ludwig, KF ;
Moustakas, TD .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) :1389-1395
[5]  
Edgar JH, 1994, EMIS DATA REV SERIES, V11
[6]   Phase separation in InGaN grown by metalorganic chemical vapor deposition [J].
El-Masry, NA ;
Piner, EL ;
Liu, SX ;
Bedair, SM .
APPLIED PHYSICS LETTERS, 1998, 72 (01) :40-42
[7]  
Frenkel D., 2000, Computational Science Series
[8]   Solid phase immiscibility in GaInN [J].
Ho, IH ;
Stringfellow, GB .
APPLIED PHYSICS LETTERS, 1996, 69 (18) :2701-2703
[9]   Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN [J].
Kim, K ;
Lambrecht, WRL ;
Segall, B .
PHYSICAL REVIEW B, 1996, 53 (24) :16310-16326
[10]   Ab initio calculation of phase diagrams of oxides [J].
Lavrentiev, MY ;
Allan, NL ;
Barrera, GD ;
Purton, JA .
JOURNAL OF PHYSICAL CHEMISTRY B, 2001, 105 (17) :3594-3599