Planarization of substrate surface by means of ultrathin diamond-like carbon film

被引：22

作者：

Baranov, AM ^{[1
]}

机构：

[1] Res Inst Vacuum Technique, Moscow 113105, Russia

来源：

SURFACE & COATINGS TECHNOLOGY | 1998年 / 102卷 / 1-2期

关键词：

planarization; diamond-like carbon films; reactive ion etching;

D O I：

10.1016/S0257-8972(97)00629-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of reactive ion etching on surface roughness of diamond-like carbon (DLC) films was investigated. The DLC carbon films were deposited by d.c. magnetron sputtering of graphite target and r.f. plasma-enhanced chemical vapor deposition at room temperature. Plasma etching of DLC films were performed by r.f. reactive ion etching in oxygen. It is shown that the surface roughness of the diamond-like carbon film under reactive ion etching was less than that of the original substrate. (C) 1998 Elsevier Science S.A.

引用

页码：154 / 158

页数：5

共 16 条

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[2]

Artioukov I A, 1996, J Xray Sci Technol, V6, P223, DOI [10.1006/jxra.1996.0013, 10.3233/XST-1996-6301]

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