Spin transport through quantum dots

被引：1

作者：

Lima, ATD ^{[1
]}

Anda, EV ^{[1
]}

机构：

[1] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-22453900 Rio De Janeiro, Brazil

来源：

MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期

关键词：

quantum dot; magnetic field; polarization;

D O I：

10.1016/S0026-2692(03)00021-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the spin polarized transport properties of a nanoscopic device constituted by a quantum dot connected to two leads. We show that through the manipulation of the gate potential applied to the dot it is possible to control, in a very efficient way, the intensity and polarization of the current that goes along the system. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：337 / 339

页数：3

共 6 条

[1] ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].

DATTA, S ;

DAS, B .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667

[2]

DATTA S, 1995, ELECT TRANSPORT MESO, P9

[3] Spin-polarized transport in a two-dimensional electron gas with interdigital-ferromagnetic contacts [J].

Hu, CM ;

Nitta, J ;

Jensen, A ;

Hansen, JB ;

Takayanagi, H .

PHYSICAL REVIEW B, 2001, 63 (12)

[4] Ballistic spin-polarized transport and Rashba spin precession in semiconductor nanowires [J].

Mireles, F ;

Kirczenow, G .

PHYSICAL REVIEW B, 2001, 64 (02)

[5]

RASETTI M, 1991, HUBARD MODEL

[6]

RASHBA EI, 1960, SOV PHYS-SOL STATE, V2, P1109

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