Dielectric properties of highly oriented Pb0.65Ba0.35ZrO3 thin films

被引：0

作者：

Kim, JS ^{[1
]}

Choi, JS

Lee, JH

Kim, SH

Jeon, SH

Hwang, IR

Park, BH

Choi, TJ

Shin, SH

Lee, JC

Lee, MJ

Seo, SA

Yoo, IK

机构：

[1] Konkuk Univ, Dept Phys, Seoul 143706, South Korea

[2] Konkuk Univ, Artificial Muscle Res Ctr, Seoul 143706, South Korea

[3] Sungkyunkwan Univ, Dept Mat Sci & Engn, Suwon 440746, South Korea

[4] Samsung Adv Inst Technol, Nano Device Lab, Yongin 440600, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2005年 / 47卷

关键词：

PBZ; BST; pulsed laser deposition; tunability; TCC; microwave tunable device;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Pb0.65Ba0.35ZrO3 (PBZ) thin films [1] were grown on MgO (001) substrates by pulsed laser deposition (PLD). We compared the structural and dielectric properties of PBZ thin films grown at various temperatures. A high c-axis orientation appeared in PBZ thin film grown at a deposition temperature of 550 degrees C. The c-axis-oriented PBZ thin film also showed the largest tunability among all the PBZ thin films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ thin film were 20 % and 0.00959, respectively. In addition, we compared the temperature coefficient of capacitance (TCC) of a PBZ thin film with that of a Ba0.5Sr0.5TiO3 (BST) thin film, which is a well-known material applicable to tunable microwave devices. We confirmed that the TCC value of a PBZ thin film was three times smaller than that of a BST thin film.

引用

页码：S243 / S246

页数：4

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