Dielectric properties of highly oriented Pb0.65Ba0.35ZrO3 thin films

Pb0.65Ba0.35ZrO3 (PBZ) thin films [1] were grown on MgO (001) substrates by pulsed laser deposition (PLD). We compared the structural and dielectric properties of PBZ thin films grown at various temperatures. A high c-axis orientation appeared in PBZ thin film grown at a deposition temperature of 550 degrees C. The c-axis-oriented PBZ thin film also showed the largest tunability among all the PBZ thin films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ thin film were 20 % and 0.00959, respectively. In addition, we compared the temperature coefficient of capacitance (TCC) of a PBZ thin film with that of a Ba0.5Sr0.5TiO3 (BST) thin film, which is a well-known material applicable to tunable microwave devices. We confirmed that the TCC value of a PBZ thin film was three times smaller than that of a BST thin film.