III-Nitride Nanowires Lasers

被引：0

作者：

Wang, George T. ^{[1
]}

Li, Changyi ^{[2
]}

Liu, Sheng ^{[1
]}

Wright, Jeremy B. ^{[1
]}

Leung, Benjamin ^{[1
]}

Koleske, Daniel D. ^{[1
]}

Figiel, Jeffrey J. ^{[1
]}

Luk, Ting S. ^{[1
]}

Brener, Igal ^{[1
]}

Balakrishnan, Ganesh ^{[2
]}

Brueck, Steven R. J. ^{[2
]}

机构：

[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA

[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

2016 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanowires have gained interest as coherent, nanoscale light sources. Using a top-down approach, high quality III-nitride-based nanowires with controllable height, pitch and diameter have been realized. Here, the fabrication, and lasing characteristics of GaN-based and GaN/InGaN based nanowires fabricated by this approach will be presented, along with schemes for single optical mode selection, polarization control, beam shaping, and wavelength tuning.

引用

页码：25 / 26

页数：2

共 7 条

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Li, Changyi ;

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Xu, Huiwen ;

Wright, Jeremy B. ;

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APPLIED PHYSICS LETTERS, 2012, 101 (22)

[7]

XU HW, 2012, APPL PHYS LETT, V101

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