Evidence for Chemical and Electronic Nonuniformities in the Formation of the Interface of RbF-Treated Cu(In,Ga)Se2 with CdS

被引：27

作者：

Nicoara, Nicoleta ^{[1
]}

Kunze, Thomas ^{[2
]}

Jackson, Philip ^{[3
]}

Hariskos, Dimitrios ^{[3
]}

Duarte, Roberto Felix ^{[2
]}

Wilks, Regan G. ^{[2
,4
]}

Witte, Wolfram ^{[3
]}

Baer, Marcus ^{[2
,4
,5
]}

Sadewasser, Sascha ^{[1
]}

机构：

[1] Int Iberian Nanotechnol Lab INL, P-4715330 Braga, Portugal

[2] Helmholtz Zentrum Berlin Mat & Energie GmbH HZB, Renewable Energy, D-14109 Berlin, Germany

[3] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, D-70563 Stuttgart, Germany

[4] Helmholtz Zentrum Berlin Mat & Energie GmbH, Energy Mat In Situ Lab Berlin EMIL, D-12489 Berlin, Germany

[5] Brandenburg Tech Univ Cottbus Senftenberg, Inst Phys, D-03046 Cottbus, Germany

来源：

ACS APPLIED MATERIALS & INTERFACES | 2017年 / 9卷 / 50期

关键词：

chalcopyrite; thin-film solar cells; alkali fluoride postdeposition treatment's; Kelvin probe force microscopy; surface photovoltage; photoelectron spectroscopy; FILM SOLAR-CELLS; POSTDEPOSITION TREATMENT; BAND ALIGNMENT; THIN-FILMS; KF;

D O I：

10.1021/acsami.7b12448

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the initial stages of CdS buffer layer formation on Cu(In,Ga)Se-2 (CIGSe) thin-film solar cell absorbers subjected to rubidium fluoride (RIDE) postdeposition treatment (PDT). A detailed characterization of the CIGSe/CdS interface for different chemical bath deposition (CBD) times of the CdS layer is obtained from spatially resolved atomic and Kelvin probe force microscopy and laterally integrating X-ray,spectroscopies. The observed spatial inhomogeneity in the interface's structural, chemical, and electronic properties of samples undergoing up to 3 min of CBD treatments is indicative of a Complex interface formation including an incomplete coverage and/or nonuniform composition of the buffer layer. It is expected that this result impacts solar cell performance, in particular when reducing the CdS layer thickness (e.g., in an attempt to increase the collection in the ultraviolet wavelength region). Our work provides important findings on the absorber/buffer interface formation and reveals the underlying mechanism for limitations in the reduction of the CdS thickness, even when an alkali PDT is applied to the CIGSe absorber.

引用

页码：44173 / 44180

页数：8

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