Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes

被引：17

作者：

Xin, HP ^{[1
]}

Welty, RJ ^{[1
]}

Hong, YG ^{[1
]}

Tu, CW ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

high resolution X-ray diffraction; molecular beam epitaxy; nitrides; semiconducting III-V materials; light emitting diodes;

D O I：

10.1016/S0022-0248(01)00771-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied the effects of N incorporation in Ga(In)P and explored their applications for light-emitting diodes (LEDs). The GaInNP epilayers were grown on (1 0 0) GaP substrates by gas-source MBE using an RF nitrogen radical beam source. Red LEDs based on GaN0.011 P-0.989/GaP double-heterostructure grown on (1 0 0) Gap substrates were successfully fabricated. Compared to conventional AlGaInP LEDs, this LED eliminates etching of the GaAs substrate and wafer-bonding of a transparent GaP substrate. Partially relaxed GaN0.011P0.989 active layers, however, degraded the emission efficiency. Incorporation of In in GaN0.015P0.985 alloy to lattice-match to GaP not only maintains the direct band gap. but also improves the sample structural quality and increases the integrated PL intensity by 40%, compared to GaN0.015P0.985. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：558 / 561

页数：4

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