Photo-pumped lasing from low density self-assembled InGaAs/GaAs quantum dots within a high-Q vertical cavity

被引：0

作者：

Bennett, AJ ^{[1
]}

Roberts, C ^{[1
]}

Oulton, RF ^{[1
]}

Stavrinou, PN ^{[1
]}

Murray, R ^{[1
]}

Parry, G ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Ctr Elect Mat & Devices, London SW7 2BZ, England

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2003年 / 35卷 / 13期

基金：

英国工程与自然科学研究理事会;

关键词：

InGaAs/GaAs self-assembled quantum dots; vertical cavity surface emitting lasers; EMISSION;

D O I：

10.1023/A:1027329018394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-Q cavity containing three layers of self-assembled InGaAs/GaAs quantum dots has been prepared. Emission occurs in the wavelength range 1275-1285 nm over the wafer surface. We have observed lasing thresholds in the power-in-versus-power-out characteristics, with associated changes in the angular emission pro. le, when the structure is optically pumped CW at 300 K. At high pump powers spectrally resolved lateral modes are seen in the emission spectra of a planar cavity and this is discussed in terms of the index change induced by the pump laser.

引用

页码：1157 / 1163

页数：7

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