Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

被引：12

作者：

Chiu, Hsien-Chin ^{[1
,2
]}

Liu, Chia-Hao ^{[1
]}

Huang, Chong-Rong ^{[1
]}

Chiu, Chi-Chuan ^{[1
]}

Wang, Hsiang-Chun ^{[1
]}

Kao, Hsuan-Ling ^{[1
]}

Lin, Shinn-Yn ^{[2
,3
]}

Chien, Feng-Tso ^{[4
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan

[2] Chang Gung Univ, Chang Gung Mem Hosp, Dept Radiat Oncol, Taoyuan 333, Taiwan

[3] Chang Gung Univ, Coll Med, Dept Med Imaging & Radiol Sci, Taoyuan 333, Taiwan

[4] Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan

来源：

MEMBRANES | 2021年 / 11卷 / 10期

关键词：

p-GaN E-mode HEMT; normally-off; gate insulator; lifetime; reliability; RELIABILITY; PERFORMANCE; BREAKDOWN;

D O I：

10.3390/membranes11100727

中图分类号：

Q5 [生物化学]; Q7 [分子生物学];

学科分类号：

071010 ; 081704 ;

摘要：

A metal-insulator-semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected insulator, atomic layer deposition-grown AlN, and GaN. A conventional p-type enhancement-mode GaN device without an Al2O3/AlN layer, known as a Schottky gate (SG) p-GaN HEMT, was also fabricated for comparison. Because of the presence of the Al2O3/AlN layer, the gate leakage and threshold voltage of the MIS-HEMT improved more than those of the SG-HEMT did. Additionally, a high turn-on voltage was obtained. The MIS-HEMT was shown to be reliable with a long lifetime. Hence, growing a high-quality Al2O3/AlN layer in an HEMT can help realize a high-performance enhancement-mode transistor with high stability, a large gate swing region, and high reliability.

引用

页数：8

共 22 条

[1]

Buttari D., 2004, International Journal of High Speed Electronics and Systems, V14, P756, DOI 10.1142/S012915640400279X

[2] High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment [J].