High photocurrent gain in NiO thin film/M-doped ZnO nanorods (M = Ag, Cd and Ni) heterojunction based ultraviolet photodiodes

被引：11
作者：
Echresh, Ahmad [1 ]
Echresh, Mohammad [2 ]
Khranoyskyy, Volodymyr [3 ]
Nur, Omer [1 ]
Willander, Magnus [1 ]
机构：
[1] Linkoping Univ, Dept Sci & Technol, Phys Elect & Nanotechnol Div, Campus Norrkoping, SE-60174 Norrkoping, Sweden
[2] Sanati Hoveizeh Univ, Dept Phys, Ahvaz, Iran
[3] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183581 Linkoping, Sweden
来源：
JOURNAL OF LUMINESCENCE | 2016年 / 178卷
关键词：
ZnO nanorods; NiO thin film; Ultraviolet photodiode; Photocurrent gain; FABRICATION;
D O I：
10.1016/j.jlumin.2016.06.023
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The thermal evaporation method has been used to deposit p-type NiO thin film, which was combined with hydrothermally grown n-type pure and M-doped ZnO nanorods (M=Ag, Cd and Ni) to fabricate a high performance p-n heterojunction ultraviolet photodiodes. The fabricated photodiodes show high rectification ratio and relatively low leakage current. The p-NiO/n-Zn0.94Ag0.06O heterojunction photo diode displays the highest photocurrent gain (similar to 1.52 x 10(4)), a photoresponsivity of similar to 4.48 x 10(3) AW(-1) and a photosensitivity of similar to 13.56 compared with the other fabricated photodiodes. The predominated transport mechanisms of the p-n heterojunction ultraviolet photodiodes at low and high applied forward bias may be recombination-tunneling and space charge limited current, respectively. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：324 / 330
页数：7
相关论文
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