Thermal Analysis of Metal-Organic Precursors for Functional Cu:NiOx Hole Transporting Layer in Inverted Perovskite Solar Cells: Role of Solution Combustion Chemistry in Cu:NiOx Thin Films Processing

被引:1
作者
Ioakeimidis, Apostolos [1 ]
Papadas, Ioannis T. [1 ,2 ]
Koutsouroubi, Eirini D. [3 ]
Armatas, Gerasimos S. [3 ]
Choulis, Stelios A. [1 ]
机构
[1] Cyprus Univ Technol, Dept Mech Engn & Mat Sci & Engn, Mol Elect & Photon Res Unit, CY-3036 Limassol, Cyprus
[2] Univ West Att, Sch Publ Hlth, Dept Publ & Community Hlth, Athens 11521, Greece
[3] Univ Crete, Dept Mat Sci & Technol, Iraklion 70013, Greece
基金
欧洲研究理事会;
关键词
Cu:NiOx; metal oxides; solution combustion synthesis; metal-organic precursors; fuels; oxidizers; electronic thin films; hole transporting layers; annealing temperature; perovskite solar cells; LOW-TEMPERATURE; HIGH-PERFORMANCE; NICKEL-OXIDE; EFFICIENT; EXTRACTION; NIOX; DEPOSITION; STABILITY; VOLTAGE; LI;
D O I
10.3390/nano11113074
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Low temperature solution combustion synthesis emerges as a facile method for the synthesis of functional metal oxides thin films for electronic applications. We study the solution combustion synthesis process of Cu:NiOx using different molar ratios (w/o, 0.1 and 1.5) of fuel acetylacetone (Acac) to oxidizer (Cu, Ni Nitrates) as a function of thermal annealing temperatures 150, 200, and 300 degrees C. The solution combustion synthesis process, in both thin films and bulk Cu:NiOx, is investigated. Thermal analysis studies using TGA and DTA reveal that the Cu:NiOx thin films show a more gradual mass loss while the bulk Cu:NiOx exhibits a distinct combustion process. The thin films can crystallize to Cu:NiOx at an annealing temperature of 300 degrees C, irrespective of the Acac/Oxidizer ratio, whereas lower annealing temperatures (150 and 200 degrees C) produce amorphous materials. A detail characterization study of solution combustion synthesized Cu:NiOx, including XPS, UV-Vis, AFM, and Contact angle measurements, is presented. Finally, 50 nm Cu:NiOx thin films are introduced as HTLs within the inverted perovskite solar cell device architecture. The Cu:NiOx HTL annealed at 150 and 200 degrees C provided PVSCs with limited functionality, whereas efficient triple-cation Cs-0.04(MA(0.17)FA(0.83))(0.96) Pb(I0.83Br0.17)(3)-based PVSCs achieved for Cu:NiOx HTLs for annealing temperature of 300 degrees C.
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页数:16
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