Band-dispersion-originated photoelectron intensity oscillations during Si epitaxial growth on Si(100)

被引：4
作者：
Enta, Y
Takegawa, Y
Shoji, D
Suemitsu, M
Takakuwa, Y
Kato, H
Miyamoto, N
机构：
[1] TOHOKU UNIV,SCI MEASUREMENTS RES INST,SENDAI,MIYAGI 980,JAPAN
[2] NATL LAB HIGH ENERGY PHYS,PHOTON FACTORY,TSUKUBA,IBARAKI 305,JAPAN
来源：
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1996年 / 80卷
关键词：
D O I：
10.1016/0368-2048(96)02949-0
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
The photoelectron intensities from the surface states on Si(100) periodically oscillate during Si growth and that oscillation is associated with the alternation between the 2x1 and the 1x2 surface reconstructions [Y.Enta et al., Surf. Sci. 313(1994)L797]. For clarifying the origin of the oscillation in more detail, angle-resolved-ultraviolet-photoelectron-spectroscopy measurements for both Si(100)2x1 and 1x2 clean surfaces have been performed. As a result, it was found that the photoelectron intensity oscillations on Si(100) arise from the difference in the surface band dispersions between the 2x1 and the 1x2 clean surfaces.
引用
收藏
页码：173 / 176
页数：4
相关论文
共 4 条
[1]   ORIGIN OF SURFACE-STATE PHOTOEMISSION INTENSITY OSCILLATION DURING SI EPITAXIAL-GROWTH ON A SI(100) SURFACE [J].
ENTA, Y ;
HORIE, T ;
MIYAMOTO, N ;
TAKAKUWA, Y ;
SAKAMOTO, H ;
KATO, H .
SURFACE SCIENCE, 1994, 313 (1-2) :L797-L800
[2]   PHOTOELECTRON INTENSITY OSCILLATION AS A PROBE TO MONITOR SI LAYER-BY-LAYER GROWTH [J].
ENTA, Y ;
MIYAMOTO, N ;
TAKAKUWA, Y ;
KATO, H .
APPLIED SURFACE SCIENCE, 1994, 82-3 :327-331
[3]   PHOTOELECTRON-SPECTROSCOPY OF SURFACE-STATES ON SEMICONDUCTOR SURFACES [J].
HANSSON, GV ;
UHRBERG, RIG .
SURFACE SCIENCE REPORTS, 1988, 9 (5-6) :197-292
[4]   PHOTOELECTRON INTENSITY OSCILLATION DURING CHEMICAL-VAPOR-DEPOSITION ON SI(100) SURFACE WITH SI2H6 [J].
TAKAKUWA, Y ;
ENTA, Y ;
YAMAGUCHI, T ;
HORI, T ;
NIWANO, M ;
MIYAMOTO, N ;
ISHIDA, H ;
SAKAMOTO, H ;
NISHIMORI, T .
APPLIED PHYSICS LETTERS, 1994, 64 (15) :2013-2015
1