A 90 nm CMOS DUAL-BAND DIVIDE-BY-2 AND-4 INJECTION-LOCKED FREQUENCY DIVIDER

被引：5

作者：

Jang, Sheng-Lyang ^{[1
]}

Wu, Yuan-Kai ^{[1
]}

Chang, Chia-Wei ^{[1
]}

Huang, Jhin-Fang ^{[1
]}

Liu, Cheng-Chen ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2010年 / 52卷 / 06期

关键词：

90 nut CMOS; dual-band; fourth-order resonator; divide-by-2 and-4 injection-locked frequency divider; LOCKING;

D O I：

10.1002/mop.25217

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fourth-order resonator has been implemented to design a 65 GHz injection-locked frequency divider (ILFD) implemented in a 90 nm CMOS process. The ILFD is realized with a cross-coupled nMOS LC-tank oscillator with an inductor switch for frequency band selection. The LC tank can be a second-or fourth-order resonator depending upon the on/off state of a switch across a series-rioted inductor. Measurement results show that at the supply voltage of 0.5 V. the free-running frequency is from 8.68 (16.147) to 9.928 (17.89) GHz for the low(high-) frequency band. The divide-by-2 operational locking range is from 14.9 (30.64) to 22.2 (37.74) GHz for the low-(high)frequency band. The divide-by-4 operational locking range is from 34.4 (64.6) to 40.35 (67) GHz Pr the low-(high)-frequency), band. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1421-1425, 2010: Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25217

引用

页码：1421 / 1425

页数：5

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