Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure

被引：31

作者：

Lin, G ^{[1
]}

Yen, ST ^{[1
]}

Lee, CP ^{[1
]}

Liu, DC ^{[1
]}

机构：

[1] MINIST TRANSPORTAT & COMMUN, TELECOMMUN LABS, TAIPEI, TAIWAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 12期

关键词：

D O I：

10.1109/68.544686

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a very small vertical far-field angle achieved by lasers with a specially designed structure. For an InGaAs-AlGaAs quantum-well laser with a 2.5-mu m-wide ridge waveguide, the far-field pattern has a vertical far-field angle of 13 degrees and a lateral far-field angle of 8 degrees. Meanwhile, the threshold current remains acceptably low (approximate to 36 mA for a 500-mu m-long cavity), The slope efficiency of the L-I characteristic is high (>0.9 W/A) compared to that of the conventional laser.

引用

页码：1588 / 1590

页数：3

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