In the current study, ZnO/Si thin film was prepared through a plasma-enhanced chemical vapour deposition (PECVD) method and used for the elimination of azithromycin (AZM) from various real samples. Some specs about the structure and morphology of the ZnO/Si thin film were systematically examined utilising approaches such as X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), and Scanning electron microscopy (SEM). The adsorption of AZM on the ZnO/Si thin film was accomplished under various statuses that are equilibrium time = 45 min, adsorbent dose = 0.025, pH solution = 7.0, and primary AZM concentration = 15 mg L-1. Four models were utilised to monitoring the adsorption kinetic of AZM onto ZnO/Si thin film: pseudo-first order (PFO), pseudo-second order (PSO), Elovich (E) and intraparticle diffusion (ID) models. Equilibrium data were ?tted to Langmuir (L), Freundlich (F), Temkin (T) and Redlich-Peterson (R-P) isotherm models. The elimination efficiency of AZM via ZnO/Si thin film was evaluated in three real samples. Finally, it should be noted that AZM loaded on the adsorbent could be easily desorbed with 0.1 mol L(-1)HNO(3)and the adsorbent showed good reusability for adsorption of the studied drug.
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页码:5229 / 5246
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Abbasi S., 2016, Iranian Journal of Health and Environment, V9, P433
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CSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, Spain
Univ Carthage, LPLMHNM, Fac Sci Bizerte, Zarzouna 7021, TunisiaCSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, Spain
Akkari, M.
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Aranda, P.
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CSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, SpainCSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, Spain
Aranda, P.
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Mayoral, A.
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Univ Zaragoza, Lab Microscopas Avanzadas, Inst Nanociencia Aragon, Edificio I D, Zaragoza 50018, SpainCSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, Spain
Mayoral, A.
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CSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, SpainCSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, Spain
Garcia-Hernandez, M.
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Amara, A. Ben Haj
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Ruiz-Hitzky, E.
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CSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, SpainCSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, Spain
机构:
CSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, Spain
Univ Carthage, LPLMHNM, Fac Sci Bizerte, Zarzouna 7021, TunisiaCSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, Spain
Akkari, M.
;
Aranda, P.
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CSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, SpainCSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, Spain
Aranda, P.
;
Mayoral, A.
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Univ Zaragoza, Lab Microscopas Avanzadas, Inst Nanociencia Aragon, Edificio I D, Zaragoza 50018, SpainCSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, Spain
Mayoral, A.
;
Garcia-Hernandez, M.
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CSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, SpainCSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, Spain
Garcia-Hernandez, M.
;
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Amara, A. Ben Haj
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Ruiz-Hitzky, E.
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CSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, SpainCSIC, Inst Ciencia Mat Madrid, C Sor Juana Ines de la Cruz 3, Madrid 28049, Spain