Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique

被引：1

作者：

Dolny, G ^{[1
]}

Gollagunta, N ^{[1
]}

Suliman, S ^{[1
]}

Trabzon, L ^{[1
]}

Horn, M ^{[1
]}

Awadelkarim, OO ^{[1
]}

Fonash, SJ ^{[1
]}

Knoedler, CM ^{[1
]}

Hao, J ^{[1
]}

Ridley, R ^{[1
]}

Kocon, C ^{[1
]}

Grebs, T ^{[1
]}

Zeng, J ^{[1
]}

机构：

[1] Intersil Corp, Mountain Top, PA 18707 USA

来源：

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年

关键词：

D O I：

10.1109/ISPSD.2001.934645

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high-electric-field stress reliability of trench-gated power MOSFETS has been characterized using high-resolution scanning electron microscopy, transistor parameter, and charge-pumping measurements. Degradation due to electrical stress was observed to be in the form of positive charge accumulation at the drain edge of the channel. This results in an effective shortening of the electrical channel length. Oxide thinning at the trench corners together with sidewall roughness caused by the trench etch are suggested as the mechanisms responsible for this observation. Design approaches to alleviate this effect are demonstrated.

引用

页码：431 / 434

页数：4