Hierarchical Constrained Coding for Floating-Gate to Floating-Gate Coupling Mitigation in Flash Memory

被引:0
|
作者
Motwani, Ravi [1 ]
机构
[1] Intel Corp, NVM Solut Grp, Santa Clara, CA 95051 USA
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Flash memory comprises of grid of cells arranged in a rectangular lattice. A cell is a floating gate and the information is stored as charge in these floating gates. A multi-level-cell (MLC) stores more than one bit per cell. Programming of a cell in NAND Flash is attained by Fowler-Nordhiem tunneling till the ideal programmed voltage is attained. However, due to programming time constraints, some tolerance is accepted and the actual programmed voltage is allowed to be within some range of the ideal value. The read level is a random variable with some distribution around the mean programming level. Errors occur during reads because of overlaps of the level distributions. If the raw bit error rate has to be kept low, the distributions must be narrow. One of the impairment which broadens the distributions is the capacitive coupling between neighboring cells. This phenomenon called as inter-cell-interference due to floating-gate to floating-gate coupling can be from mild to extreme. To combat this effect, constrained coding is a possible solution. Constrained coding entails forbidding certain adjacent-cell charge-level combinations. There can be various types of constrained codes, one type of constrained codes assumes that level information is available while decoding all pages [1]. However, due to read latency requirements, level information may not be available while reading all pages. In this paper, constrained codes are proposed which do not need level information while decoding all pages and hence the average read latency is reduced. Error propagation is a crucial degrading factor for constrained decoding and the codes proposed are robust to channel noise. A new decoding algorithm which keeps synchronization which is crucial to contain error propagation is also proposed.
引用
收藏
页数:5
相关论文
共 50 条
  • [41] Scalable Virtual-Ground Multilevel-Cell Floating-Gate Flash Memory
    Yamauchi, Yoshimitsu
    Kamakura, Yoshinari
    Matsuoka, Toshimasa
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (08) : 2518 - 2524
  • [42] A Floating-Gate Memory Cell for Continuous-Time Programming
    Rumberg, Brandon
    Graham, David W.
    2012 IEEE 55TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2012, : 214 - 217
  • [43] Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory
    Govoreanu, B.
    Wellekens, D.
    Haspeslagh, L.
    Brunco, D. P.
    De Vos, J.
    Aguado, D. Ruiz
    Blomme, P.
    van der Zanden, K.
    Van Houdt, J.
    SOLID-STATE ELECTRONICS, 2008, 52 (04) : 557 - 563
  • [44] Impact of few electron phenomena on floating-gate memory reliability
    Molas, G
    Deleruyelle, D
    De Salvo, B
    Ghibaudo, G
    Gely, M
    Jacob, S
    Lafond, D
    Deleonibus, S
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 877 - 880
  • [45] A Temperature Compensated Array of CMOS Floating-gate Analog Memory
    Huang, Chenling
    Chakrabartty, Shantanu
    2010 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, 2010, : 109 - 112
  • [46] Redesigning Commercial Floating-Gate Memory for Analog Computing Applications
    Bayat, F. Merrikh
    Guo, X.
    Om'mani, H. A.
    Do, N.
    Likharev, K. K.
    Strukov, D. B.
    2015 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2015, : 1921 - 1924
  • [47] Electronic Potentiometer Cell using a CMOS Floating-Gate Memory
    de la Cruz-Alejo, Jesus
    Gomez-Castaneda, Felipe
    Moreno-Cadenas, Jose A.
    2008 5TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, COMPUTING SCIENCE AND AUTOMATIC CONTROL (CCE 2008), 2008, : 242 - 246
  • [48] Degradation of floating-gate memory reliability by few electron phenomena
    Molas, Gabriel
    Deleruyelle, Damien
    De Salvo, Barbara
    Ghibaudo, Gerard
    Gely, Marc
    Perniola, Luca
    Lafond, Dominique
    Deleonibus, Simon
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (10) : 2610 - 2619
  • [49] MEMORY PHENOMENA IN NOVEL FLOATING-GATE GAAS/ALGAAS DEVICES
    CAPASSO, F
    BELTRAM, F
    WALKER, JF
    MALIK, RJ
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (96): : 493 - 498
  • [50] MEMORY PHENOMENA IN NOVEL FLOATING-GATE GAAS/ALGAAS DEVICES
    CAPASSO, F
    BELTRAM, F
    WALKER, JF
    MALIK, RJ
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 493 - 498