Silicon Nanowires Embedded Pressure Sensor with Annularly Grooved Diaphragm for Sensitivity Improvement

被引：0

作者：

Zhang, Songsong ^{[1
]}

Wang, Tao ^{[1
]}

Lee, Chengkuo ^{[1
]}

Lou, Liang ^{[2
]}

Tsang, Wei-Mong ^{[2
]}

Kwong, Dim-Lee ^{[2
]}

机构：

[1] Natl Univ Singapore NUS, Dept Elect & Comp Engn, Singapore, Singapore

[2] Agcy Sci Technol & Res, Inst Microelect IME, Singapore, Singapore

来源：

2014 IEEE NINTH INTERNATIONAL CONFERENCE ON INTELLIGENT SENSORS, SENSOR NETWORKS AND INFORMATION PROCESSING (IEEE ISSNIP 2014) | 2014年

关键词：

Silicon Nanowires (SiNWs); Pressure sensor; Annular groove; Low pressure; Biomedical application; PIEZORESISTANCE;

D O I：

暂无

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

A NEMS piezoresistive pressure sensor with annular grooves on the circular diaphragm is presented here. Silicon Nanowires (SiNWs) are embedded as sensing elements at the edge of the diaphragm. This new diaphragm structure improves the device sensitivity by 2.5 times under a low pressure range of 0 similar to 120 mmHg with respect to our previously reported flat diaphragm pressure sensor. With the advantage of superior piezoresistive effect of SiNWs, this sensitivity improvement is even remarkable in contrast to other recently reported piezoresistive pressure sensing devices. Additionally, by leveraging the miniaturized sensing diaphragm (radius of 100 mu m), the sensor can be potentially used as implantable device for low pressure sensing applications.

引用

页数：6