Experimental analysis of the effect of metal thickness on the quality factor in integrated spiral inductors for RF ICs

被引:46
|
作者
Choi, YS [1 ]
Yoon, JB [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Div Elect Engn, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea
关键词
integrated micromachined inductor; metal thickness; micromachining; Q-factor; radio frequency (RF) ICs; resistance; RF MEMS;
D O I
10.1109/LED.2003.822652
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of metal thickness on the quality (Q-) factor of the integrated spiral inductor is investigated in this paper. The inductors with metal thicknesses of 5 similar to 22.5 mum were fabricated on the standard silicon substrate of 1 similar to 30 Omega (.) cm in resistivity by using thick-metal surface micromachining technology. The fabricated inductors were measured at GHz ranges to extract their major parameters (Q-factor, inductance, and resistance). From the experimental analysis assisted by FEM simulation, we first reported that the metal thickness' effect on the Q-factor strongly depends on the innermost turn diameter of the spiral inductor, so that it is possible to improve Q-factors further by increasing the metal thickness beyond 10 mum.
引用
收藏
页码:76 / 79
页数:4
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