Experimental analysis of the effect of metal thickness on the quality factor in integrated spiral inductors for RF ICs

被引：46
|
作者：
Choi, YS [1 ]
Yoon, JB [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Div Elect Engn, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 02期
关键词：
integrated micromachined inductor; metal thickness; micromachining; Q-factor; radio frequency (RF) ICs; resistance; RF MEMS;
D O I：
10.1109/LED.2003.822652
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of metal thickness on the quality (Q-) factor of the integrated spiral inductor is investigated in this paper. The inductors with metal thicknesses of 5 similar to 22.5 mum were fabricated on the standard silicon substrate of 1 similar to 30 Omega (.) cm in resistivity by using thick-metal surface micromachining technology. The fabricated inductors were measured at GHz ranges to extract their major parameters (Q-factor, inductance, and resistance). From the experimental analysis assisted by FEM simulation, we first reported that the metal thickness' effect on the Q-factor strongly depends on the innermost turn diameter of the spiral inductor, so that it is possible to improve Q-factors further by increasing the metal thickness beyond 10 mum.
引用
收藏
页码：76 / 79
页数：4
相关论文
共 50 条
  • [21] Experimental Analysis of Planar Spiral Inductors
    Ammouri, Aymen
    Belloumi, Hamed
    Ben Salah, Tarek
    Kourda, Ferid
    2014 INTERNATIONAL CONFERENCE ON ELECTRICAL SCIENCES AND TECHNOLOGIES IN MAGHREB (CISTEM), 2014,
  • [22] Enhancing the quality factor of aerosol jet printed RF spiral inductors through gold electroplating
    Abu Mosa, Md
    Kang, Huijune
    Jo, Jeong Yeop
    Bang, Jinho
    Ahn, Dal
    Jang, Youna
    Kwon, Kye-Si
    FLEXIBLE AND PRINTED ELECTRONICS, 2024, 9 (02):
  • [23] Modeling and analysis of multilevel spiral inductors for Si-based ICs
    Jiang, Qi-Feng
    Li, Zheng-Fan
    Shanghai Jiaotong Daxue Xuebao/Journal of Shanghai Jiaotong University, 2003, 37 (03): : 349 - 351
  • [24] ANR- and PSO-based synthesis of on-chip spiral inductors for RF ICs
    Mandal, Sushanta K.
    Sural, Shamik
    Patra, Amit
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2008, 27 (01) : 188 - 192
  • [25] High quality factor silicon-integrated spiral inductors achieved by using thick top metal with different passivation schemes
    Chu, SF
    Chew, KW
    Loh, WB
    Wang, YM
    Onn, BG
    Ju, Y
    Zhang, J
    Shao, K
    2001 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS, 2001, : 154 - 157
  • [26] Improved quality factor spiral inductors on GaAs substrates
    Bahl, IJ
    IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1999, 9 (10): : 398 - 400
  • [27] A simple and complete circuit model for the coupling between symmetrical spiral inductors in silicon RF-ICs
    Vecchi, F.
    Repossi, M.
    Mazzanti, A.
    Arcioni, P.
    Svelto, F.
    2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2, 2008, : 431 - +
  • [28] Analysis on the effect of parallel current path on the quality factor of CMOS spiral inductors for 1-10 GHz
    Suh, D
    Mheen, BK
    MICROELECTRONIC ENGINEERING, 2005, 77 (3-4) : 292 - 296
  • [29] High Quality Factor of CNT-Based Spiral Inductors
    Maradei, F.
    D'Amore, M.
    Cruciani, S.
    Feliziani, M.
    2014 INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY, TOKYO (EMC'14/TOKYO), 2014, : 469 - 472
  • [30] Investigation of on-chip integrated inductors fabricated in SOI-MUMPs for RF MEMS ICs
    Fahimullah Khan
    M. I. Younis
    Analog Integrated Circuits and Signal Processing, 2020, 102 : 585 - 591
12345