Experimental analysis of the effect of metal thickness on the quality factor in integrated spiral inductors for RF ICs

被引：46
作者：
Choi, YS [1 ]
Yoon, JB [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Div Elect Engn, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 02期
关键词：
integrated micromachined inductor; metal thickness; micromachining; Q-factor; radio frequency (RF) ICs; resistance; RF MEMS;
D O I：
10.1109/LED.2003.822652
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of metal thickness on the quality (Q-) factor of the integrated spiral inductor is investigated in this paper. The inductors with metal thicknesses of 5 similar to 22.5 mum were fabricated on the standard silicon substrate of 1 similar to 30 Omega (.) cm in resistivity by using thick-metal surface micromachining technology. The fabricated inductors were measured at GHz ranges to extract their major parameters (Q-factor, inductance, and resistance). From the experimental analysis assisted by FEM simulation, we first reported that the metal thickness' effect on the Q-factor strongly depends on the innermost turn diameter of the spiral inductor, so that it is possible to improve Q-factors further by increasing the metal thickness beyond 10 mum.
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收藏
页码：76 / 79
页数：4
相关论文
共 17 条
[1]  
[Anonymous], 2000, DESIGN SIMULATION AP
[2]   Fully integrated CMOS power amplifier design using the distributed active-transformer architecture [J].
Aoki, I ;
Kee, SD ;
Rutledge, DB ;
Hajimiri, A .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2002, 37 (03) :371-383
[3]  
Burghartz JN, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P1015, DOI 10.1109/IEDM.1995.499389
[4]  
CARBONERO JL, 1995, IEEE MTT-S, P1475, DOI 10.1109/MWSYM.1995.406252
[5]   A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductors [J].
Craninckx, J ;
Steyaert, MSJ .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (05) :736-744
[6]   THE CURRENT DISTRIBUTION AND AC RESISTANCE OF A MICROSTRIP STRUCTURE [J].
FARAJIDANA, R ;
CHOW, YL .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1990, 38 (09) :1268-1277
[7]   DESIGN OF PLANAR RECTANGULAR MICROELECTRONIC INDUCTORS [J].
GREENHOUSE, HM .
IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (02) :101-109
[8]   Fully monolithic CMOS RF power amplifiers: Recent advances [J].
Gupta, R ;
Allstot, DJ .
IEEE COMMUNICATIONS MAGAZINE, 1999, 37 (04) :94-98
[9]   Silicon-based high-Q inductors incorporating electroplated copper and low-K BCB dielectric [J].
Huo, X ;
Chen, KJ ;
Chan, PCH .
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (09) :520-522
[10]  
LEE DB, 1966, P IEEE, V54, P329
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