Formation of Multilayer Structures with Integrated Membranes Based on Porous Silicon

被引：1
|
作者：
Bolotov, V. V. [1 ]
Ivlev, K. E. [1 ]
Knyazev, E. V. [1 ]
Ponomareva, I. V. [1 ]
Roslikov, V. E. [1 ]
机构：
[1] Russian Acad Sci, Omsk Sci Ctr, Siberian Branch, Omsk 644024, Russia
来源：
SEMICONDUCTORS | 2020年 / 54卷 / 05期
关键词：
porous silicon; electrochemical etching; electron microscopy; multilayer structures; membranes; MACROPORE FORMATION; N-SI; SENSOR; MECHANISMS;
D O I：
10.1134/S1063782620050024
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Multilayer integrated porous membranes are obtained in a monolithic frame containing two types of porous silicon: macroporous silicon with pore diameters up to 10 mu m and channel silicon with channel diameters from 100 to 300 nm. A laboratory technology is proposed for preparing macroporous/channel silicon two-layer structures with the use of high-resistance n-Si substrates (1 omega cm). The pore-formation mechanism and its effect on the morphology of porous layers for electrolytes using formic acid and ammonium hydroxide are discussed.
引用
收藏
页码：609 / 613
页数：5
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