Formation of Multilayer Structures with Integrated Membranes Based on Porous Silicon

被引：1

作者：

Bolotov, V. V. ^{[1
]}

Ivlev, K. E. ^{[1
]}

Knyazev, E. V. ^{[1
]}

Ponomareva, I. V. ^{[1
]}

Roslikov, V. E. ^{[1
]}

机构：

[1] Russian Acad Sci, Omsk Sci Ctr, Siberian Branch, Omsk 644024, Russia

来源：

SEMICONDUCTORS | 2020年 / 54卷 / 05期

关键词：

porous silicon; electrochemical etching; electron microscopy; multilayer structures; membranes; MACROPORE FORMATION; N-SI; SENSOR; MECHANISMS;

D O I：

10.1134/S1063782620050024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Multilayer integrated porous membranes are obtained in a monolithic frame containing two types of porous silicon: macroporous silicon with pore diameters up to 10 mu m and channel silicon with channel diameters from 100 to 300 nm. A laboratory technology is proposed for preparing macroporous/channel silicon two-layer structures with the use of high-resistance n-Si substrates (1 omega cm). The pore-formation mechanism and its effect on the morphology of porous layers for electrolytes using formic acid and ammonium hydroxide are discussed.

引用

页码：609 / 613

页数：5

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