Deciphering the structure-photoluminescence correlation at small-tilt-angle grain boundaries in monolayer WS2

被引:1
|
作者
Hou, Fuchen [1 ,2 ,3 ]
Zhang, Yubo [1 ,2 ,4 ]
Li, Daiyue [1 ,2 ,3 ]
Che, Liangyu [1 ,2 ]
Lin, Junhao [1 ,2 ,3 ]
机构
[1] Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
[2] Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn SIQSE, Shenzhen 518055, Peoples R China
[3] Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quantum Funct Mat & Devices, Shenzhen 518055, Peoples R China
[4] Minjiang Univ, Coll Phys & Elect Informat Engn, MinJiang Collaborat Ctr Theoret Phys, Fuzhou 350108, Peoples R China
基金
中国国家自然科学基金;
关键词
SINGLE-LAYER; MOLYBDENUM; DEFECTS; TRANSITION; STRAIN; MOS2;
D O I
10.1063/5.0097638
中图分类号
O59 [应用物理学];
学科分类号
摘要
Grain boundaries (GBs) frequently emerge in a CVD-grown large-scale transition metal dichalcogenides monolayer thin film, which affect the electronic and optical properties of the material. Photoluminescence (PL) can be easily quenched/enhanced at GBs, which are, however, merely investigated in relatively large tilt angles ( theta > 14 ) in previous research. Here, we experimentally examine the PL properties of monolayer WS2 GBs with tilt angles as small as a few degrees. Contrary to conventional wisdom, we find that PL intensity remains intact by the GBs when their tilt angles theta & LE; 8 & DEG;. The abnormal PL behavior is elucidated by a detailed structure analysis on the dislocation cores. For a small tilt angle, the strain fields introduced by the defective cores are sparsely distributed without mutual coupling, and the chemical stoichiometry along the GBs preserves very well. These two key structural features of the small-tilt-angle GBs allow excitons to diffuse transparently across the GB, leading to a neglectable influence on the optical and electronic properties, as verified by our first-principle simulations. The PL invariant of the small-tilt-angle GBs sheds light on the future development of CVD-grown wafer-scale techniques and their optical applications. Published under an exclusive license by AIP Publishing.
引用
收藏
页数:7
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