Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test

被引：40

作者：

Caesar, M. ^{[1
]}

Dammann, M. ^{[1
]}

Polyakov, V. ^{[1
]}

Wahereit, P. ^{[1
]}

Bronner, W. ^{[1
]}

Baeumler, M. ^{[1
]}

Quay, R. ^{[1
]}

Mikulla, M. ^{[1
]}

Ambacher, O. ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany

来源：

2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2012年

关键词：

AlGaN; GaN; HEMT; power amplifier; reliability; traps; TRANSISTORS; GAN;

D O I：

10.1109/IRPS.2012.6241883

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of RF stress at 10 GHz and DC stress on AlGaN/GaN HEMTs have been investigated by comparing static and transient characteristics before and after stress. It was found that the threshold voltage shifts in both tests significantly to the negative. A defect level of 0.44 eV was detected during Id-trapping analysis. Using the experimental trap data and simulating different locations of traps in the device it was established that the defective region is extended throughout the gate region. Quantitative approximations of the trap density suggest an extension of the traps into the barrier layer with a concentration of approximately 10(18) cm(-3).

引用

页数：5

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