Piezoresistive CMOS sensor for out-of-plane normal stress

被引：18

作者：

Lemke, Benjamin ^{[1
]}

Baskaran, Rajashree ^{[2
]}

Paul, Oliver ^{[1
]}

机构：

[1] Univ Freiburg, Microsyst Mat Lab, Dept Microsyst Engn IMTEK, D-79110 Freiburg, Germany

[2] Intel Corp, Components Res, Hillsboro, OR 97124 USA

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2012年 / 176卷

关键词：

CMOS; Piezoresistive sensors; Mechanical stress; Out-of-plane; Vertical; MECHANICAL-STRESS; FLIP-CHIP; ELECTRON-MOBILITY; SILICON; FIELD; COMPONENTS; DESIGN; ARRAYS;

D O I：

10.1016/j.sna.2011.12.038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A piezoresistive sensor for measuring the temperature compensated sum (sigma(xx) + sigma(yy))/2 - beta sigma(zz) of the three mechanical normal stress components, where sigma(xx) + sigma(yy), sigma(zz), and beta denote the in-plane normal stress sum, the out-of-plane normal stress, and a numerical factor close to 1 is presented. The device is based on CMOS-compatible diffusions and exploits the piezoresistive effect acting on vertical current components. The sensor signal and resulting possibilities to extract mechanical stress components are analyzed. Experimental results illustrate the influence of design parameters and operating conditions on the sensor performance and are compared to a simple analytical sensor model. A second-order cross-sensitivity to in-plane shear stresses is discussed and determined experimentally. The temperature compensation is demonstrated by a force measurement with a deviation between the numerically expected and the experimentally extracted value smaller than 15% over the temperature range from 10 degrees C to 60 degrees C. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：10 / 18

页数：9

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