A 22-GHz push-push CMOS oscillator using micromachined inductors

被引：21
作者：
Wang, TP [1 ]
Liu, RC
Chang, HY
Lu, LH
Wang, H
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan
[2] Natl Taiwan Univ, Grad Inst Commun Engn, Taipei 10764, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2005年 / 15卷 / 12期
关键词：
micromachined inductors; voltage-controlled oscillators (VCOs);
D O I：
10.1109/LMWC.2005.860003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents a low phase noise 0.35-mu m CMOS push-push oscillator utilizing micromachined inductors. This oscillator results in an improvement in phase noise compared with the previously, published Si-based voltage-controlled oscillators (VCOs) around 20 GHz. With the high-Q inductors introduced by the micromachined structure, the oscillator achieves an oscillaiting frequency of 22.2 GHz while exhibiting an output power of - 7.5 dBm with a phase noise of - 110.1 dBc/Hz at 1-MHz offset. This work also demonstrates the highest operating frequency among previously published Si-based VCOs using micromachined structures.
引用
收藏
页码：859 / 861
页数：3
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