Tuning magnetic relaxation by oblique deposition

被引：67

作者：

Barsukov, I. ^{[1
,2
]}

Landeros, P. ^{[3
]}

Meckenstock, R. ^{[1
,2
]}

Lindner, J. ^{[1
,2
,4
]}

Spoddig, D. ^{[1
,2
]}

Li, Zi-An ^{[1
,2
]}

Krumme, B. ^{[1
,2
]}

Wende, H. ^{[1
,2
]}

Mills, D. L. ^{[4
]}

Farle, M. ^{[1
,2
]}

机构：

[1] Univ Duisburg Essen, Fak Phys, D-47048 Duisburg, Germany

[2] Univ Duisburg Essen, CeNIDE, D-47048 Duisburg, Germany

[3] Univ Tecn Federico Santa Maria, Dept Fis, Valparaiso 2390123, Chile

[4] Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 01期

关键词：

FERROMAGNETIC-RESONANCE; EXTRINSIC CONTRIBUTIONS; THIN-FILMS; ANISOTROPY; LAYERS;

D O I：

10.1103/PhysRevB.85.014420

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Oblique deposition conditions of Si were used to create a periodic compositional defect matrix in Fe(3)Si/MgO(001) thin films. The modified growth conditions provoke shadow effects, which lead to a two-magnon scattering channel with twofold symmetry in the film plane. Its axis is controlled by the sample orientation with respect to the Si evaporator. Angular-dependent ferromagnetic resonance data reveal an enhanced magnetic-relaxation rate induced by the dipolar interactions originating from these artificially created defect structures, while magnetic anisotropy is shown to be influenced negligibly. Experimental results agree well with the developed theoretical approach allowing one to distinguish different relaxation channels.

引用

页数：6

共 24 条

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