On an indium-tin-oxide thin film based ammonia gas sensor

被引：60

作者：

Lin, Cheng-Wei ^{[1
]}

Chen, Huey-Ing ^{[2
]}

Chen, Tai-You ^{[1
]}

Huang, Chien-Chang ^{[1
]}

Hsu, Chi-Shiang ^{[1
]}

Liu, Rong-Chau ^{[3
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

[3] Chung Shan Inst Sci & Technol, Tao Yuan, Taiwan

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2011年 / 160卷 / 01期

关键词：

ITO; Ammonia sensor; RF sputtering; Grain size; Oxygen deficiency; SENSING CHARACTERISTICS; SUBSTRATE-TEMPERATURE; ITO FILMS; FABRICATION;

D O I：

10.1016/j.snb.2011.07.041

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

An ammonia sensor basing on the indium tin oxide (ITO) thin film on a quartz substrate which was fabricated by RF sputtering with substrate thermal treatment, is studied and demonstrated. From the experimental results, the good NH(3) sensing performances including high response of 2312%, fast response and recovery times of 73 and 104s upon the introduction of a 1000 ppm NH(3) Jair gas at 150 degrees C are observed. In comparison, the proposed sensor is superior to other previously reported ITO thin film based ammonia sensors. Due to the advantages of simple structure, easy operation, low cost, and excellent performances, the studied device gives a promising use in high-performance ammonia sensor applications. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1481 / 1484

页数：4

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