Relationship between crystal structure and electrical property of K2NiF4-type (Ca1-xNd1-x) CoO4-δ

被引:21
作者
Taguchi, H
Kido, H
Tabata, K
机构
[1] Okayama Univ, Fac Sci, Surface Sci Res Lab, Okayama 7008530, Japan
[2] Osaka Municipal Tech Res Inst, Jyoto Ku, Osaka 5368553, Japan
[3] Nara Inst Sci & Technol, Grad Sch Mat Sci, Ecomat Sci Lab, Nara 6300101, Japan
关键词
K2NiF4-type oxide; crystal structure; n-type semiconductor; thermopower; hopping;
D O I
10.1016/j.physb.2003.09.270
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
K2NiF4-type (Ca1-xNd1+x)CoO4-delta (0.0 less than or equal to x less than or equal to 0.2) was synthesized and found to have a tetragonal structure with a space group I4/mmm. The Rietveld method indicates that distortion in the CoO6 octahedron decreases gradually with increasing x. Although (Ca1-xNd1+x)CoO4-delta is paramagnetic above 80 K, the (1/chi)-T curve does not follow the Curie-Weiss law. (Ca1-xNd1+x)CoO4-delta is an n-type semiconductor, and its thermopower varies linearly with temperature. The X-ray photoelectron spectroscopy measurement indicates that the binding energy of the Co (2)p(3/2) level shifts toward the high binding energy site with increasing Co2+ ion content. The electrical property of (Ca1-xNd1+X)CoO4-delta is explained using the model of transport by activated hopping of carriers. Since the gradual increase in the Co-O(l) distance prevents electron transfer in the Co2+-O(1)-Co3+ path, both the electrical resistivity and the activation energy increase with increasing x. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:271 / 277
页数:7
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