Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications

被引：8

作者：

Eisenbraun, E ^{[1
]}

van der Straten, O ^{[1
]}

Zhu, Y ^{[1
]}

Dovidenko, K ^{[1
]}

Kaloyeros, A ^{[1
]}

机构：

[1] New York State Ctr Adv Thin Film Technol, Albany, NY 12203 USA

来源：

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2001年

关键词：

D O I：

10.1109/IITC.2001.930062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A metalorganic atomic layer deposition (ALD) process has been demonstrated for advanced 'zero thickness' copper barrier applications. This process, which is carried out at substrate temperatures below 450 degreesC on commercial ALD reactor, employs TBTDET and NH3 as the tantalum and nitrogen sources, respectively. Fundamental ALD functionality data is presented, including work performed on low-k dielectric substrates. The chemical, microstructural, and electrical performance of these films is presented, in addition to their conformality over high aspect ratio patterned structures, and implications for applications in advanced microelectronics processing will be discussed.

引用

页码：207 / 209

页数：3

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