Temporal evolution of GaSb/GaAs quantum dot formation

被引：70
作者：
Müller-Kirsch, L
Heitz, R
Pohl, UW
Bimberg, D
Häusler, I
Kirmse, H
Neumann, W
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Humboldt Univ, AG Kristallog, Inst Phys, D-10115 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 07期
关键词：
D O I：
10.1063/1.1394715
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The formation of GaSb quantum dots in a GaAs matrix in the Stranski-Krastanow growth mode under metalorganic chemical vapor deposition conditions is investigated. Transmission electron microscopical images and photoluminescence measurements show the islands to nucleate during the GaSb deposition and to grow subsequently by mass transfer from the two-dimensional wetting layer. The evolving surface morphology indicates local equilibria between quantum dots and the surrounding wetting layer regions. (C) 2001 American Institute of Physics.
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页码：1027 / 1029
页数：3
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