Optical properties of cubic boron arsenide

被引:33
|
作者
Song, Bai [1 ,2 ,3 ]
Chen, Ke [1 ]
Bushick, Kyle [4 ]
Mengle, Kelsey A. [4 ]
Tian, Fei [5 ,6 ]
Gamage, Geethal Amila Gamage Udalamatta [5 ,6 ]
Ren, Zhifeng [5 ,6 ]
Kioupakis, Emmanouil [4 ]
Chen, Gang [1 ]
机构
[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
[2] Peking Univ, Dept Energy & Resources Engn, Beijing 100871, Peoples R China
[3] Peking Univ, Beijing Innovat Ctr Engn Sci & Adv Technol, Beijing 100871, Peoples R China
[4] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[5] Univ Houston, Dept Phys, Houston, TX 77204 USA
[6] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
基金
美国国家科学基金会;
关键词
HIGH THERMAL-CONDUCTIVITY; BAS;
D O I
10.1063/5.0004666
中图分类号
O59 [应用物理学];
学科分类号
摘要
The ultrahigh thermal conductivity of cubic boron arsenide (BAs) makes it a promising material for next-generation electronics and optoelectronics. Here, we report measured optical properties of BAs crystals, including the complex dielectric function, refractive index, and absorption coefficient in the ultraviolet, visible, and near-infrared wavelength range. The data were collected at room temperature using spectroscopic ellipsometry and transmission and reflection spectroscopy. We further calculated the optical response using density functional theory and many-body perturbation theory, considering quasiparticle and excitonic corrections. The computed values for the direct and indirect bandgaps (4.25eV and 2.07eV) agree well with the measured results (4.12eV and 2.02eV). Our findings pave the way for using BAs in future electronic and optoelectronic applications that take advantage of its demonstrated ultrahigh thermal conductivity and predicted high ambipolar carrier mobility.
引用
收藏
页数:4
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