Optical properties of cubic boron arsenide

被引:33
|
作者
Song, Bai [1 ,2 ,3 ]
Chen, Ke [1 ]
Bushick, Kyle [4 ]
Mengle, Kelsey A. [4 ]
Tian, Fei [5 ,6 ]
Gamage, Geethal Amila Gamage Udalamatta [5 ,6 ]
Ren, Zhifeng [5 ,6 ]
Kioupakis, Emmanouil [4 ]
Chen, Gang [1 ]
机构
[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
[2] Peking Univ, Dept Energy & Resources Engn, Beijing 100871, Peoples R China
[3] Peking Univ, Beijing Innovat Ctr Engn Sci & Adv Technol, Beijing 100871, Peoples R China
[4] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[5] Univ Houston, Dept Phys, Houston, TX 77204 USA
[6] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
基金
美国国家科学基金会;
关键词
HIGH THERMAL-CONDUCTIVITY; BAS;
D O I
10.1063/5.0004666
中图分类号
O59 [应用物理学];
学科分类号
摘要
The ultrahigh thermal conductivity of cubic boron arsenide (BAs) makes it a promising material for next-generation electronics and optoelectronics. Here, we report measured optical properties of BAs crystals, including the complex dielectric function, refractive index, and absorption coefficient in the ultraviolet, visible, and near-infrared wavelength range. The data were collected at room temperature using spectroscopic ellipsometry and transmission and reflection spectroscopy. We further calculated the optical response using density functional theory and many-body perturbation theory, considering quasiparticle and excitonic corrections. The computed values for the direct and indirect bandgaps (4.25eV and 2.07eV) agree well with the measured results (4.12eV and 2.02eV). Our findings pave the way for using BAs in future electronic and optoelectronic applications that take advantage of its demonstrated ultrahigh thermal conductivity and predicted high ambipolar carrier mobility.
引用
收藏
页数:4
相关论文
共 50 条
  • [21] Native point defects from stoichiometry-linked chemical potentials in cubic boron arsenide
    Wang, Yaxian
    Windl, Wolfgang
    JOURNAL OF APPLIED PHYSICS, 2021, 129 (07)
  • [22] Electronic and valleytronic properties of crystalline boron-arsenide tuned by strain and disorder
    Craco, L.
    Carara, S. S.
    Barboza, E. da Silva
    Milosevic, M. V.
    Pereira, T. A. S.
    RSC ADVANCES, 2023, 13 (26) : 17907 - 17913
  • [23] Orchestrating the impact of antisites and vacancy defects on the elastic and optoelectronic properties of boron arsenide
    Hussain, Akbar
    Mian, Shabeer Ahmad
    Ahmed, Ejaz
    Jang, Joonkyung
    JOURNAL OF MOLECULAR MODELING, 2023, 29 (12)
  • [24] Multimillimeter-sized cubic boron arsenide grown by chemical vapor transport via a tellurium tetraiodide transport agent
    Xing, Jie
    Chen, Xi
    Zhou, Yuanyuan
    Culbertson, James. C.
    Freitas, Jaime A., Jr.
    Glaser, Evan R.
    Zhou, Jianshi
    Shi, Li
    Ni, Ni
    APPLIED PHYSICS LETTERS, 2018, 112 (26)
  • [25] Ab initio study of the unusual thermal transport properties of boron arsenide and related materials
    Broido, D. A.
    Lindsay, L.
    Reinecke, T. L.
    PHYSICAL REVIEW B, 2013, 88 (21)
  • [26] Boron isotope effect on the thermal conductivity of boron arsenide single crystals
    Sun, H.
    Chen, K.
    Gamage, G. A.
    Ziyaee, H.
    Wang, F.
    Wang, Y.
    Hadjiev, V. G.
    Tian, F.
    Chen, G.
    Ren, Z.
    MATERIALS TODAY PHYSICS, 2019, 11
  • [27] Competition between phonon-vacancy and four-phonon scattering in cubic boron arsenide by machine learning interatomic potential
    Tang, Jialin
    Li, Guotai
    Wang, Qi
    Zheng, Jiongzhi
    Cheng, Lin
    Guo, Ruiqiang
    PHYSICAL REVIEW MATERIALS, 2023, 7 (04)
  • [28] Idealizing Tauc Plot for Accurate Bandgap Determination of Semiconductor with Ultraviolet-Visible Spectroscopy: A Case Study for Cubic Boron Arsenide
    Zhong, Hong
    Pan, Fengjiao
    Yue, Shuai
    Qin, Chengzhen
    Hadjiev, Viktor
    Tian, Fei
    Liu, Xinfeng
    Lin, Feng
    Wang, Zhiming
    Bao, Jiming
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2023, 14 (29) : 6702 - 6708
  • [29] Significant tensile elasticity of nanoscale boron arsenide
    Li, Penghui
    Hao, Xiaokuan
    Lu, Shenglin
    Wang, Linyan
    Xiong, Guoyu
    Tong, Ke
    Duan, Yu
    Bu, Yeqiang
    Gao, Guoying
    Wang, Hongtao
    Xu, Bo
    Nie, Anmin
    Tian, Fei
    SCIENCE CHINA-MATERIALS, 2023, 66 (04) : 1675 - 1680
  • [30] Structural phase transition, elastic and thermal properties of boron arsenide: Pressure-induced effects
    Daoud, Salah
    Bioud, Nadhira
    Bouarissa, Nadir
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 31 : 124 - 130