The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC

被引：44

作者：

Eriksson, Jens ^{[1
]}

Pearce, Ruth ^{[1
]}

Iakimov, Tihomir ^{[1
]}

Virojanadara, Chariya ^{[1
]}

Gogova, Daniela ^{[2
]}

Andersson, Mike ^{[1
]}

Syvajarvi, Mikael ^{[1
]}

Spetz, Anita Lloyd ^{[1
]}

Yakimova, Rositza ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[2] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 24期

关键词：

GRAPHITE;

D O I：

10.1063/1.4729556

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A pivotal issue for the fabrication of electronic devices on epitaxial graphene on SiC is controlling the number of layers and reducing localized thickness inhomogeneities. Of equal importance is to understand what governs the unintentional doping of the graphene from the substrate. The influence of substrate surface topography on these two issues was studied by work function measurements and local surface potential mapping. The carrier concentration and the uniformity of epitaxial graphene samples grown under identical conditions and on substrates of nominally identical orientation were both found to depend strongly on the terrace width of the SiC substrate after growth. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729556]

引用

页数：5

共 30 条

[1] Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].

Berger, C ;

Song, ZM ;

Li, TB ;

Li, XB ;

Ogbazghi, AY ;

Feng, R ;

Dai, ZT ;

Marchenkov, AN ;

Conrad, EH ;

First, PN ;

de Heer, WA .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916

[2] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[3] Mapping of Local Electrical Properties in Epitaxial Graphene Using Electrostatic Force Microscopy [J].

Burnett, Tim ;

Yakimova, Rositza ;

Kazakova, Olga .

NANO LETTERS, 2011, 11 (06) :2324-2328

[4] Kelvin probe microscopy and electronic transport in graphene on SiC(0001) in the minimum conductivity regime [J].

Curtin, A. E. ;

Fuhrer, M. S. ;

Tedesco, J. L. ;

Myers-Ward, R. L. ;

Eddy, C. R., Jr. ;

Gaskill, D. K. .

APPLIED PHYSICS LETTERS, 2011, 98 (24)

[5]

Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]

[6] Evolution in surface morphology of epitaxial graphene layers on SiC induced by controlled structural strain [J].

Ferralis, Nicola ;

Kawasaki, Jason ;

Maboudian, Roya ;

Carraro, Carlo .

APPLIED PHYSICS LETTERS, 2008, 93 (19)

[7] Evidence of Structural Strain in Epitaxial Graphene Layers on 6H-SiC(0001) [J].

Ferralis, Nicola ;

Maboudian, Roya ;

Carraro, Carlo .

PHYSICAL REVIEW LETTERS, 2008, 101 (15)

[8] Local work function measurements of epitaxial graphene [J].

Filleter, T. ;

Emtsev, K. V. ;

Seyller, Th. ;

Bennewitz, R. .

APPLIED PHYSICS LETTERS, 2008, 93 (13)

[9] Doping graphene with metal contacts [J].

Giovannetti, G. ;

Khomyakov, P. A. ;

Brocks, G. ;

Karpan, V. M. ;

van den Brink, J. ;

Kelly, P. J. .

PHYSICAL REVIEW LETTERS, 2008, 101 (02)

[10] Charge distribution and screening in layered graphene systems [J].

Guinea, F. .

PHYSICAL REVIEW B, 2007, 75 (23)

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