A low-power fast transient output capacitor-free adaptively biased LDO based on slew rate enhancement for SoC applications

被引:24
|
作者
Lim, Chee-Cheow [1 ]
Lai, Nai-Shyan [2 ]
Tan, Gim-Heng [3 ]
Ramiah, Harikrishnan [1 ]
机构
[1] Univ Malaya, Dept Elect Engn, Kuala Lumpur, Malaysia
[2] Asia Pacific Univ Technol & Innovat, Sch Engn, Kuala Lumpur, Malaysia
[3] Segi Univ, Dept Elect & Elect Engn, Selangor, Malaysia
关键词
Output capacitor-free LDO; Low-power; Adaptive biasing (ADB); Slew rate; Common mode feedback (CMFB); SoC; LOW-DROPOUT REGULATOR; LOW-QUIESCENT CURRENT; FREQUENCY COMPENSATION; SUPPLY REJECTION; LOW-VOLTAGE; 65-NM CMOS; AMPLIFIER; FVF;
D O I
10.1016/j.mejo.2015.06.002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a highly efficient and fast transient output capacitor-free low-dropout regulator (LDO) presented. The proposed LDO architecture is based on differential transconductance amplifiers pairing with push-pull stage to enable effective output driving capability. The slew rate at the gate of the output transistor (SRG) is further enhanced by common mode-feedback (CMFB) resistors and a coupling capacitor to bypass band-limited components. By adopting adaptive biasing (ADB) technique, the loop bandwidth is extended proportionally to the output load while maintaining high current efficiency at minimum load. The proposed LDO is designed using cost-effective 035 mu m CMOS technology. Post-layout simulation results show that the LDO occupies an active area of 0.069 mm(2), consuming only a quiescent current of 4.45 mu A at a minimum load of 100 mu A. The LDO is able to regulate the output at constant 1.2 V with a dropout voltage of 0.2 V. When the load is ramped from 100 mu A to 100 mA in 100 ns, the output transient can be fully recovered within 2 mu s. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:740 / 749
页数:10
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