Negative differential resistance due to single-electron switching

被引：65
作者：
Heij, CP [1 ]
Dixon, DC [1 ]
Hadley, P [1 ]
Mooij, JE [1 ]
机构：
[1] Delft Univ Technol, DIMES, NL-2628 CJ Delft, Netherlands
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 07期
关键词：
D O I：
10.1063/1.123449
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/Al(x)O(y) islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport. (C) 1999 American Institute of Physics. [S0003-6951(99)00607-5].
引用
收藏
页码：1042 / 1044
页数：3
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