A multiferroic BiFeO3 film was fabricated on a Pt/Ti/SiO2/Si(100) substrate by a chemical solution deposition (CSD) method, and this was followed by postdeposition annealing at 923 K for 10 min in air. X-ray diffraction analysis indicated the formation of the polycrystalline single phase of the BiFeO3 film. A high remanent polarization of 89 mu C/cm(2) was observed at 90 K together with a relatively low electric coercive field of 0.32 MV/cm, although the ferroelectric hysteresis loops could not be observed at room temperature due to a high leakage current density. The temperature dependence of the ferroelectric hysteresis loops indicated that these hysteresis loops lose their shape above 165 K, and the nominal remanent polarization drastically increased due to the leakage current. Magnetic measurements indicated that the saturation magnetization was less than 1 emu/cm(3) at room temperature and increased to approximately 2 emu/cm(3) at 100 K, although the spontaneous magnetization could not appear. The magnetization curves of polycrystalline BiFeO3 film were nonlinear at both temperatures, which is different with BiFeO3 single crystal.
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Department of Materials Science and Engineering, Faculty of Engineering, National University of Singapore, Singapore 117574, SingaporeDepartment of Materials Science and Engineering, Faculty of Engineering, National University of Singapore, Singapore 117574, Singapore
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Tokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
Naganuma, Hiroshi
Shimura, Nozomi
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Tokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
Shimura, Nozomi
Miura, Jun
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Tokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
Miura, Jun
Shima, Hiromi
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Tokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
Shima, Hiromi
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Yasui, Shintaro
Nishida, Ken
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Natl Def Acad Japan, Dept Commun Engn, Yokosuka, Kanagawa, JapanTokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
Nishida, Ken
Katoda, Takashi
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Kochi Univ Technol, Dept Elect & Photon Sys Engn, Kochi 7828502, JapanTokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
Katoda, Takashi
Iijima, Takashi
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Natl Inst Adv Ind Sci & Technol, Res Ctr Hydrogen Ind Use & Storage, Tsukuba, Ibaraki 3058565, JapanTokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
Iijima, Takashi
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Funakubo, Hiroshi
Okamura, Soichiro
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Tokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
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Inha Univ, Dept Phys, Inchon 402751, South KoreaInha Univ, Dept Phys, Inchon 402751, South Korea
Singh, Preetam
Park, Y. A.
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Inha Univ, Dept Phys, Inchon 402751, South KoreaInha Univ, Dept Phys, Inchon 402751, South Korea
Park, Y. A.
Sung, K. D.
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Inha Univ, Dept Phys, Inchon 402751, South KoreaInha Univ, Dept Phys, Inchon 402751, South Korea
Sung, K. D.
Hur, N.
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Inha Univ, Dept Phys, Inchon 402751, South KoreaInha Univ, Dept Phys, Inchon 402751, South Korea
Hur, N.
Jung, J. H.
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Inha Univ, Dept Phys, Inchon 402751, South KoreaInha Univ, Dept Phys, Inchon 402751, South Korea
Jung, J. H.
Noh, W-S
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POSTECH, Dept Phys, Pohang 790784, South Korea
POSTECH, Pohang Accelerator Lab, Pohang 790784, South KoreaInha Univ, Dept Phys, Inchon 402751, South Korea
Noh, W-S
Kim, J-Y
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POSTECH, Dept Phys, Pohang 790784, South Korea
POSTECH, Pohang Accelerator Lab, Pohang 790784, South KoreaInha Univ, Dept Phys, Inchon 402751, South Korea
Kim, J-Y
Yoon, J.
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Korea Basic Sci Inst, Quantum Mat Res Team, Taejon 305333, South KoreaInha Univ, Dept Phys, Inchon 402751, South Korea
Yoon, J.
Jo, Y.
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Korea Basic Sci Inst, Quantum Mat Res Team, Taejon 305333, South KoreaInha Univ, Dept Phys, Inchon 402751, South Korea