A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC

被引：10

作者：

Elahipanah, Hossein ^{[1
]}

Asadollahi, Ali ^{[1
]}

Ekstrom, Mattias ^{[1
]}

Salemi, Arash ^{[1
]}

Zetterling, Carl-Mikael ^{[1
]}

Ostling, Mikael ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Sch Informat & Commun Technol, SE-16440 Kista, Sweden

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2017年 / 6卷 / 04期

关键词：

Silicides - Nickel compounds - Ohmic contacts;

D O I：

10.1149/2.0041705jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is to anneal the contacts in two steps. The process is successfully employed on wafer-level and a contact resistivity below 5 x 10(-6) Omega.cm(2) is achieved. The influence of the proposed process on the oxide quality is investigated and no significant effect is observed. The proposed self-aligned technology eliminates the undesirable effects of the lift-off process. Moreover, it is simple, fast, and manufacturable at wafer-scale which saves time and cost. (c) The Author(s) 2017. Published by ECS. All rights reserved.

引用

页码：P197 / P200

页数：4

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