Raman characterization of Bi12SiO20 thin films obtained by pulsed laser deposition

被引：13
作者：
Alonso, JC
Diamant, R
HaroPoniatowski, E
FernandezGuasti, M
Munoz, G
Camarillo, I
Jouanne, M
Morhange, JF
机构：
[1] UNIV AUTONOMA METROPOLITANA IZTAPALAPA, DEPT FIS, MEXICO CITY 09340, DF, MEXICO
[2] CNRS, PHYS SOLIDES LAB, F-75252 PARIS 05, FRANCE
来源：
APPLIED SURFACE SCIENCE | 1997年 / 109卷
关键词：
D O I：
10.1016/S0169-4332(96)00674-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The synthesis by pulsed laser deposition and characterization by Raman spectroscopy of Bi12SiO20 thin films are presented. The Raman spectra of the thin films are close to their crystalline counterpart only in the presence of an oxygen flow during growth. In the absence of oxygen, the observed spectra are similar to that of pure bismuth material.
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收藏
页码：359 / 361
页数：3
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